STL60N10F7 Description
STL60N10F7 belongs to the family of N-channel STripFET? F7 power MOSFET developed by STMicroelectronics. Based on the STripFET? F7 technology and a new trench gate structure, Extremely low on-state resistance, internal capacitance reduction, and gate charge reduction can be ensured for faster and more efficient switching.
STL60N10F7 Features
Lowest RDS(on)
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Available in the PowerFLAT 5x6 package
STL60N10F7 Applications
