FDFS2P102A BJT Description
The FDFS2P102A P-Channel MOSFET combines the exceptional performance of Infineon PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a SO-8 package. Its Drain-Source Voltage is rated -20 V and it gas an extended operating and storage temperature.
FDFS2P102A MOSFET Features
–3.3 A, –20V RDS(ON)= 125 [email protected] VGS= –10 V
VF< 0.39 V @ 1 A (TJ= 125°C)
VF< 0.47 V @ 1 A
VF< 0.58 V @ 2 A
Schottky and MOSFET incorporated into single power surface mount
SO-8 package
Electrically independent Schottky and MOSFET pinout for design flexibility
FDFS2P102A MOSFET Applications
Load Switching
Variable-Frequency Drives
Power Electronics
Linear Amplifiers
Servo Controls
PWM Modules
