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STGWT40V60DLF

STGWT40V60DLF

STGWT40V60DLF

STMicroelectronics

STGWT40V60DLF datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGWT40V60DLF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Operating Temperature-55°C~175°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation283W
Base Part Number STGWT40
Element ConfigurationSingle
Power Dissipation283W
Input Type Standard
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.35V
Test Condition 400V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 40A
IGBT Type Trench Field Stop
Gate Charge226nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C -/208ns
Switching Energy 411μJ (off)
Gate-Emitter Voltage-Max 20V
Height 26.7mm
Length 15.7mm
Width 5.7mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:2010 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.31000$4.31
30$3.66200$109.86
120$3.17367$380.8404

STGWT40V60DLF Product Details

STGWT40V60DLF Description


The STGWT40V60DLF is an IGBT developed using an advanced proprietary trench gate field stop structure.



STGWT40V60DLF Features


  • Designed for soft commutation only

  • Maximum junction temperature: TJ = 175 °C

  • Tail-less switching off

  • VCE(sat) = 1.8 V (typ.) @ IC = 40 A

  • Tight parameters distribution

  • Safe paralleling

  • Low thermal resistance

  • Low VF soft recovery co-packaged diode



STGWT40V60DLF Applications


  • Induction heating

  • Microwave oven

  • Resonant converters


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