IKW50N65F5FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
SOT-23
IKW50N65F5FKSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Power Dissipation
305W
Element Configuration
Single
Power Dissipation
305W
Input Type
Standard
Collector Emitter Voltage (VCEO)
1.6V
Max Collector Current
80A
Reverse Recovery Time
52 ns
Collector Emitter Breakdown Voltage
650V
Collector Emitter Saturation Voltage
1.6V
Test Condition
400V, 25A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 50A
Gate Charge
120nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
21ns/175ns
Switching Energy
490μJ (on), 160μJ (off)
Radiation Hardening
No
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1381 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.38000
$5.38
10
$4.86900
$48.69
240
$4.05167
$972.4008
720
$3.50028
$2520.2016
IKW50N65F5FKSA1 Product Details
IKW50N65F5FKSA1 Description
IKW50N65F5FKSA1 is a single IGBT with a Collector-Emitter Breakdown Voltage of 650V from Infineon Technologies. IKW50N65F5FKSA1 operates between -40°C~175°C, and its Current - Collector (Ic) (Max) is 80A. The IKW50N65F5FKSA1 has 3 pins and it is available in Tube packaging way. IKW50N65F5FKSA1 has a 650V Voltage - Collector Emitter Breakdown (Max) value.
IKW50N65F5FKSA1 Features
650Vbreakdownvoltage
Low gate charge QG
IGBT co-packed with RAPID 1 fast and soft antiparallel diode
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
IKW50N65F5FKSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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