NGTB40N120FL3WG IGBT Description
This Insulated Gate Bipolar Transistor (IGBT) offers outstanding performance in demanding switching applications, delivering both low on-state voltage and little switching loss. It is constructed using a durable and cost-effective Ultra Field Stop Trench design. The IGBT is a good choice for solar and UPS applications. A soft and fast co packaged free wheeling diode with a low forward voltage is incorporated into the device. NGTB40N120FL3WG has a high maximum junction temperature of 175°C and is improved for high-speed switching purpose applications.
NGTB40N120FL3WG IGBT Features
Extremely Efficient Trench with Ultra Field Stop Technology
TJmax = 175°C
Soft Fast Reverse Recovery Diode
Optimized for High-Speed Switching
These are Pb?Free Devices
NGTB40N120FL3WG IGBT Applications
Solar Inverter
Uninterruptible Power Inverter Supplies (UPS)
Welding
Industrial Applications
Automobiles
