STGF4M65DF2 Description
This IGBT was created employing a cutting-edge, exclusive trench gate field-stop construction. The device is a member of the M series of IGBTs, which represent the performance and efficiency of inverter systems in situations where low-loss and short-circuit functionality are crucial. Additionally, the narrow parameter distribution and positive VCE(sat) temperature coefficient lead to safer paralleling operation.
STGF4M65DF2 Features
Short-circuit withstand time of 6 seconds
IC = 4 A, VCE(sat) = 1.6 V (typ.
The parameter distribution is tight.
More secure paralleling
Minimal thermal conductivity
Antiparallel diode that recovers softly and quickly
STGF4M65DF2 Applications
