Name: STGWA35HF60WDI
Brand: STMicroelectronics
SKU: STGWA35HF60WDI
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	260W
Base Part Number	STGW35
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Input Type	Standard
Power - Max	260W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	70A
Reverse Recovery Time	85 ns
Collector Emitter Breakdown Voltage	600V
Turn On Time	45 ns
Test Condition	390V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Turn Off Time-Nom (toff)	295 ns
Gate Charge	140nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	30ns/175ns
Switching Energy	185μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

STGWA35HF60WDI Product Details

STGWA35HF60WDI Description

STGWA35HF60WDI is a 600v ultrafast IGBT with a low drop diode. This ultrafast IGBT STGWA35HF60WDI is developed using new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency

operation (over 100 kHz). The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor STGWA35HF60WDI is in the TO-247 package with 200W power dissipation.