STGW80H65DFB-4 Description
STGW80H65DFB-4, a part of the new HB series of IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It ensures extremely low conduction and switching losses to maximize the efficiency of very high-frequency converters. A safer paralleling operation can be provided based on a positive VCE(sat) temperature coefficient and very tight parameter distribution. The STGW80H65DFB-4 IGBT is embedded in the TO247-4 package for the purpose of saving board space.
STGW80H65DFB-4 Features
Advanced proprietary trench gate field-stop structure
PositiveVCE(sat) temperature coefficient
Very tight parameter distribution
Package: TO247-4
Low thermal resistance
STGW80H65DFB-4 Applications
Photovoltaic inverters
High frequency converters
