STGW40M120DF3 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGW40M120DF3 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
30 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
468W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGW40
Element Configuration
Single
Input Type
Standard
Power - Max
468W
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.2kV
Max Collector Current
80A
Reverse Recovery Time
355 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Collector Emitter Saturation Voltage
1.85V
Test Condition
600V, 40A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 40A
IGBT Type
Trench Field Stop
Gate Charge
125nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
35ns/140ns
Switching Energy
1.5mJ (on), 2.25mJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1100 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
600
$8.17875
$4907.25
STGW40M120DF3 Product Details
STGW40M120DF3 Description
STGW40M120DF3 is a Trench gate field-stop IGBT, M series 1200 V, 40 A low loss, built with a patented trench gate field-stop structure. The device is part of the M family of IGBTs, which provide the best compromise in performance for inverter systems that require low-loss and short-circuit capability. A positive VCE(sat) temperature coefficient and a narrow parameter distribution also make paralleling safer. It can be utilized in UPS, solar, welding, and industrial drives, according to the STGW40M120DF3 datasheet.
STGW40M120DF3 Features
Safer paralleling Low thermal resistance Tight parameters distribution 10 μs of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 40 A Soft and fast recovery antiparallel diode
STGW40M120DF3 Applications
UPS Solar Welding Industrial drives
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