STGW40V60DF Description
These devices are IGBTs developed using an advanced proprietary trench gate field stop structure.
These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the
efficiency of very high-frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGW40V60DF Features
Maximum junction temperature: TJ = 175 °C
Tail-less switching off
VCE(sat) = 1.8 V (Typ.) @ IC = 40 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Very fast soft recovery antiparallel diode
STGW40V60DF Applications
Welding
Power factor correction
UPS
Solar inverters
Chargers
