IKW50N60H3FKSA1 Description
The IKW50N60H3FKSA1 is a High-Speed IGBT in Trench and field-stop technology with a soft, fast recovery anti-parallel diode. The high-speed IKW50N60H3FKSA is used to reduce the size of the active components (25 to 70kHz). The Infineon IKW50N60H3FKSA1 provides the best compromise between switching and conduction losses. The key feature of this IGBT is a MOSFET-like turn-OFF switching behavior, leading to low turn-OFF losses.
IKW50N60H3FKSA1 Features
Low switching losses for high efficiency
Fast switching behaviour with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection is possible (down to 5R) whilst maintaining excellent switching behaviour
Short-circuit capability
Excellent performance
Low switching and conduction losses
Very good EMI behavior
IKW50N60H3FKSA1 Applications
