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AIGB40N65F5ATMA1

AIGB40N65F5ATMA1

AIGB40N65F5ATMA1

Infineon Technologies

AIGB40N65F5ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

AIGB40N65F5ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 39 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Part StatusActive
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 40A
IGBT Type NPT
In-Stock:1616 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.68000$4.68
500$4.6332$2316.6
1000$4.5864$4586.4
1500$4.5396$6809.4
2000$4.4928$8985.6
2500$4.446$11115

AIGB40N65F5ATMA1 Product Details

AIGB40N65F5ATMA1 Description

IGBTs are capable of switching on and off several thousand times a second. A VFD IGBT can turn on in less than 400 nanoseconds and off in approximately 500 nanoseconds. A VFD IGBT consists of a gate, collector and an emitter. When a positive voltage (typically +15 VDC) is applied to the gate the IGBT will turn on.



AIGB40N65F5ATMA1 Features


High speed F5 technology offering:

Best-in-Class efficiency in hard switching and resonant topologies

650V breakdown voltage*Low gate charge QG

Maximum junction temperature175°℃ Dynamically stress tested

Qualified according to AEC-Q101·Green package(RoHS compliant)

AIGB40N65F5ATMA1 Applications


·Off-board charger On-board charger DC/DC converter

·Power-factor correction


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