Name: STGP6NC60HD
Brand: STMicroelectronics
SKU: STGP6NC60HD
Price: 1.40000 USD
Availability: InStock

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STGP6NC60HD

Manufacturer part number:STGP6NC60HD

Manufacturer:STMicroelectronics

Description:STGP6NC60HD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP6NC60HD Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	56W
Current Rating	15A
Base Part Number	STGP6
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	56W
Input Type	Standard
Turn On Delay Time	12 ns
Transistor Application	POWER CONTROL
Rise Time	5ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	76 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	15A
Reverse Recovery Time	21 ns
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.9V
Turn On Time	17.3 ns
Test Condition	390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 3A
Turn Off Time-Nom (toff)	222 ns
Gate Charge	13.6nC
Current - Collector Pulsed (Icm)	21A
Td (on/off) @ 25°C	12ns/76ns
Switching Energy	20μJ (on), 68μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Height	9.15mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STGP6NC60HD Product Details

STGP6NC60HD Description

STGP6NC60HD is an N-Channel IGBT that employs the most recent high-voltage technology and is based on a unique strip arrangement. STMicroelectronics has produced an innovative family of IGBTs, the PowerMESH^TM IGBTs, that exhibit exceptional performance. The suffix "H" denotes a family specialized for high-frequency applications, with very high switching capabilities (reduced tfall) and low voltage drop.

STGP6NC60HD Features

Low V_CE(sat)
Low CRES/CIES ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery antiparallel diode
High-frequency operation

STGP6NC60HD Applications

High-frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Motor drivers