Name: STGF20H60DF
Brand: STMicroelectronics
SKU: STGF20H60DF
Price: 2.63000 USD
Availability: InStock

Technical Specifications

Parameter Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Max Power Dissipation	37W
Base Part Number	STGF20
Element Configuration	Single
Power Dissipation	37W
Input Type	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	40A
Reverse Recovery Time	90 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2V
Test Condition	400V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 20A
IGBT Type	Trench Field Stop
Gate Charge	115nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	42.5ns/177ns
Switching Energy	209μJ (on), 261μJ (off)
Height	15.75mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

STGF20H60DF Product Details

STGF20H60DF Descriptions

This STGF20H60DF IGBT was created with a cutting-edge patented trench gate and field stop structure. This IGBT series provides the best balance of conduction and switching losses for very high-frequency converters, maximizing efficiency. In addition, a positive VCE(sat) temperature coefficient and a highly tight parameter distribution make paralleling easy. The operating temperature of STGF20H60DF is -55°C~175°C TJ and its maximum power dissipation are 37W. STGF20H60DF has 3 pins and it is available in TO-220-3 Full Pack packaging way. The Collector-Emitter Voltage (VCEO) of STGF20H60DF is 600V and Collector-Emitter Saturation Voltage is 2V.