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FGA70N30TDTU

FGA70N30TDTU

FGA70N30TDTU

ON Semiconductor

FGA70N30TDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

FGA70N30TDTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2007
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation201W
Element ConfigurationSingle
Input Type Standard
Collector Emitter Voltage (VCEO) 1.5V
Reverse Recovery Time 21ns
Collector Emitter Breakdown Voltage300V
Vce(on) (Max) @ Vge, Ic 1.5V @ 15V, 20A
IGBT Type Trench
Gate Charge125nC
Current - Collector Pulsed (Icm) 160A
RoHS StatusRoHS Compliant
In-Stock:4299 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.62000$1.62
500$1.6038$801.9
1000$1.5876$1587.6
1500$1.5714$2357.1
2000$1.5552$3110.4
2500$1.539$3847.5

FGA70N30TDTU Product Details

FGA70N30TDTU Description


The FGA70N30TDTU is a 300V, 70A PDP IGBT using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.



FGA70N30TDTU Features


  • High current capability

  • Low saturation voltage: VCE(sat) =1.5V @ IC = 40A

  • High input impedance

  • Fast switching

  • RoHS complaint



FGA70N30TDTU Applications


  • PDP System


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