STGW15H120F2 Description
STGW15H120F2 IGBTs was created employing a cutting-edge, exclusive trench gate field-stop construction. These components are a part of the upgraded H series of IGBTs, which offer the best conduction and switching loss trade-offs for maximizing high frequency converter efficiency. Additionally, a highly narrow parameter distribution and a little positive VCE(sat) temperature coefficient produce safer paralleling operation.
STGW15H120F2 Features
Safe paralleling
Minimized tail current
Low thermal resistance
High speed switching series
VCE(sat) = 2.1 V (typ.) @ IC = 15 A
Maximum junction temperature: TJ = 175 °C
5 μs minimum short-circuit withstand time at TJ=150 °C
STGW15H120F2 Applications
