STGE200NB60S datasheet pdf and Transistors - IGBTs - Modules product details from STMicroelectronics stock available on our website
SOT-23
STGE200NB60S Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Chassis Mount, Panel, Screw
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Number of Pins
4
Weight
28.349523g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Series
PowerMESH™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
Nickel (Ni)
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
600W
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Current Rating
150A
Base Part Number
STGE200
Pin Count
4
Number of Elements
1
Configuration
Single
Power Dissipation
600W
Case Connection
ISOLATED
Turn On Delay Time
64 ns
Transistor Application
POWER CONTROL
Rise Time
112ns
Drain to Source Voltage (Vdss)
600V
Polarity/Channel Type
N-CHANNEL
Input
Standard
Turn-Off Delay Time
2.4 μs
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
200A
Continuous Drain Current (ID)
200A
Current - Collector Cutoff (Max)
500μA
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.2V
Input Capacitance
1.56nF
Turn On Time
170 ns
Vce(on) (Max) @ Vge, Ic
1.6V @ 15V, 100A
Turn Off Time-Nom (toff)
4600 ns
NTC Thermistor
No
Gate-Emitter Voltage-Max
20V
Input Capacitance (Cies) @ Vce
1.56nF @ 25V
VCEsat-Max
1.6 V
Height
9.1mm
Length
38.2mm
Width
25.5mm
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:291 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$45.896800
$45.8968
10
$43.298868
$432.98868
100
$40.847989
$4084.7989
500
$38.535838
$19267.919
1000
$36.354564
$36354.564
STGE200NB60S Product Details
STGE200NB60S Description
The STGE200NB60S is a low-drop N-channel PowerMESHTM IGBT based on a patented strip configuration that uses the latest high-voltage technology. The PowerMESHTM IGBT from STMicroelectronics is an innovative family of IGBTs with remarkable performance. The suffix S designates a family that has been tuned for very low VCE(sat) (at a maximum frequency of 1kHz).
STGE200NB60S Features
Low gate charge
High input impedance (voltage-driven)
Low on-voltage drop (Vcesat)
Off losses include tail current
High current capability
STGE200NB60S Applications
Low-frequency motor controls
Aluminum welding equipment
Motor Drive & Control
Motor Drive & Control
Power Management
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