FF450R12ME4PBOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available on our website
SOT-23
FF450R12ME4PBOSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Chassis Mount
Package / Case
Module
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C
Published
2002
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
11
ECCN Code
EAR99
Terminal Position
UPPER
Terminal Form
UNSPECIFIED
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-XUFM-X11
Number of Elements
2
Configuration
2 Independent
Case Connection
ISOLATED
Polarity/Channel Type
N-CHANNEL
Input
Standard
Current - Collector Cutoff (Max)
3mA
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
450A
Turn On Time
290 ns
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 450A
Turn Off Time-Nom (toff)
740 ns
IGBT Type
Trench Field Stop
NTC Thermistor
Yes
Input Capacitance (Cies) @ Vce
28nF @ 25V
RoHS Status
Non-RoHS Compliant
In-Stock:81 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
6
$183.17667
$1099.06002
FF450R12ME4PBOSA1 Product Details
FF450R12ME4PBOSA1 Description
FF450R12ME4PBOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 600V from Infineon Technologies. FF450R12ME4PBOSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 450A. The FF450R12ME4PBOSA1 has 11 pins and it is available in Module packaging way. FF450R12ME4PBOSA1 has a 600V Voltage - Collector Emitter Breakdown (Max) value.
FF450R12ME4PBOSA1 Features
Input Capacitance (Cies) @ Vce: 28nF @ 25V
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
Voltage - Collector Emitter Breakdown (Max): 1200V
Operating Temperature: -40°C~150°C
FF450R12ME4PBOSA1 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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