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STGD8NC60KDT4

STGD8NC60KDT4

STGD8NC60KDT4

STMicroelectronics

STGD8NC60KDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGD8NC60KDT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 350.003213mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerMESH™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation62W
Terminal FormGULL WING
Base Part Number STGD8
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time17 ns
Power - Max 62W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 72 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 15A
Reverse Recovery Time 23.5 ns
Collector Emitter Breakdown Voltage600V
Max Breakdown Voltage 600V
Turn On Time23 ns
Test Condition 390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 3A
Turn Off Time-Nom (toff) 242 ns
Gate Charge19nC
Current - Collector Pulsed (Icm) 30A
Td (on/off) @ 25°C 17ns/72ns
Switching Energy 55μJ (on), 85μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6.5V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4704 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.181264$1.181264
10$1.114400$11.144
100$1.051321$105.1321
500$0.991812$495.906
1000$0.935672$935.672

STGD8NC60KDT4 Product Details

STGD8NC60KDT4 Description


The STGD8NC60KDT4 is a 600 V - 8 A - short circuit rugged IGBT. This IGBT makes excellent use of the cutting-edge PowerMESH? technology to balance switching performance and minimal on-state behavior.



STGD8NC60KDT4 Features


  • Very soft ultra fast recovery antiparallel diode

  • Short circuit withstand time 10 μs

  • Lower on voltage drop (VCE(sat))

  • Lower CRES / CIES ratio (no cross-conduction susceptibility)

  • High input impedance



STGD8NC60KDT4 Applications


  • High frequency motor controls

  • SMPS and PFC in both hard switch and resonant topologies

  • Motor drivers

  • AC and DC motor drives

  • Solar inverters


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