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STGD5NB120SZT4

STGD5NB120SZT4

STGD5NB120SZT4

STMicroelectronics

STGD5NB120SZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGD5NB120SZT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation75W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating5A
T[email protected] Reflow Temperature-Max (s) 30
Base Part Number STGD5
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Power Dissipation55W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time690 ns
Power - Max 75W
Transistor Application POWER CONTROL
Rise Time170ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 12.1 μs
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 10A
JEDEC-95 Code TO-252AA
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage2V
Max Breakdown Voltage 1.2kV
Turn On Time850 ns
Test Condition 960V, 5A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 5A
Continuous Collector Current 5A
Turn Off Time-Nom (toff) 14100 ns
Td (on/off) @ 25°C 690ns/12.1μs
Switching Energy 2.59mJ (on), 9mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Height 2.4mm
Length 6.6mm
Width 6.2mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5080 items

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STGD5NB120SZT4 Product Details

STGD5NB120SZT4 IGBT Description


STMicroelectronics has produced an innovative family of IGBTs, the PowerMESHTM IGBTs, with remarkable performance using the latest high voltage technology based on a proprietary strip topology. The suffix "S" denotes a family designed to provide the lowest possible on-voltage drop for low frequency (1kHz) applications. The integrated collector-gate zener provides very precise active clamping. The STGD5NB120SZT4 is employed in a variety of applications due to its high current capabilities and low on-voltage drop.



STGD5NB120SZT4 IGBT Features


High Current Capability

Off Losses Include Tail Current

Low On-voltage Drop (Vcesat)

High Input Impedance (Voltage Driven)

High Voltage Clamping Features



STGD5NB120SZT4 IGBT Applications


Light Dimmer

SMPS

AC/DC Motor Drivers

Inrush Current Limitation

UPS

Pre-heating For Electronic Lamp Ballast


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