Name: IRGS8B60KPBF
Brand: Infineon Technologies
SKU: IRGS8B60KPBF
Price: 0.79000 USD
Availability: InStock

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IRGS8B60KPBF

Manufacturer part number:IRGS8B60KPBF

Manufacturer:Infineon Technologies

Description:IRGS8B60KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGS8B60KPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	167W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	28A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	IRGS8B60KPBF
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	167W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	MOTOR CONTROL
Rise Time	22ns
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	28A
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.2V
Turn On Time	43 ns
Test Condition	400V, 8A, 50 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 8A
Turn Off Time-Nom (toff)	220 ns
IGBT Type	NPT
Gate Charge	29nC
Current - Collector Pulsed (Icm)	34A
Td (on/off) @ 25°C	23ns/140ns
Switching Energy	160μJ (on), 160μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	56ns
Height	4.572mm
Length	10.668mm
Width	9.65mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

IRGS8B60KPBF Product Details

IRGS8B60KPBF Description

IRGS8B60KPBF is a type of insulated gate bipolar transistor manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its 10μs short circuit SOA, it is able to increase the margin for the short circuit protection scheme. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient. Moreover, it provides rugged transient performance based on square RBSOA and high ILM- rating.