STGWA40HP65FB2 Description
The STGWA40HP65FB2 from STMicroelectronics' newest IGBT 650 V HB2 series is an advancement of the advanced patented trench gate field-stop construction. The HB2 series' performance is optimized in terms of conduction, thanks to improved VCE(sat) behaviour at low current values, as well as reduced switching energy. A diode used solely for safety is co-packaged antiparallel with the IGBT.
STGWA40HP65FB2 Features
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A
Co-packaged protection diode
Minimized tail current
STGWA40HP65FB2 Applications
Power factor correction
Welding
