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STGB6NC60HDT4

STGB6NC60HDT4

STGB6NC60HDT4

STMicroelectronics

STGB6NC60HDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGB6NC60HDT4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 2.240009g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Series PowerMESH™
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish MATTE TIN
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation56W
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
Current Rating15A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STGB6
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Element ConfigurationSingle
Input Type Standard
Turn On Delay Time13 ns
Transistor Application POWER CONTROL
Rise Time5ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 98 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 15A
Reverse Recovery Time 21 ns
Collector Emitter Breakdown Voltage600V
Collector Emitter Saturation Voltage2.7V
Max Breakdown Voltage 600V
Turn On Time17.3 ns
Test Condition 390V, 3A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 3A
Continuous Collector Current 12A
Turn Off Time-Nom (toff) 222 ns
Gate Charge13.6nC
Current - Collector Pulsed (Icm) 21A
Td (on/off) @ 25°C 12ns/76ns
Switching Energy 20μJ (on), 68μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.75V
Height 4.6mm
Length 10.4mm
Width 9.35mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:5707 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.430275$0.430275
10$0.405920$4.0592
100$0.382943$38.2943
500$0.361267$180.6335
1000$0.340818$340.818

STGB6NC60HDT4 Product Details

STGB6NC60HDT4 Description

STGB6NC60HDT4 N-channel IGBT employs the most advanced technology that results in a superior trade off between switching speed and low on-state behavior. STGB6NC60HDT4 IGBT collector-gate built into the Zener has a precise active clamping, while it emits the gate. STGB6NC60HDT4 STMicroelectronics is suitable for Light vehicles, Robotics, Power Management.

STGB6NC60HDT4 Features

High-frequency operation

Low VCE(sat)

Very soft ultra fast recovery anti parallel diode

Low CRES/CIES ratio

STGB6NC60HDT4 Applications

Light vehicles

Robotics

Reference Design

Power Management

Power tools


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