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AIGB30N65F5ATMA1

AIGB30N65F5ATMA1

AIGB30N65F5ATMA1

Infineon Technologies

AIGB30N65F5ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

AIGB30N65F5ATMA1 Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 39 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Part StatusActive
Input Type Standard
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 30A
IGBT Type NPT
In-Stock:1899 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.923977$2.923977
10$2.758469$27.58469
100$2.602329$260.2329
500$2.455027$1227.5135
1000$2.316063$2316.063

AIGB30N65F5ATMA1 Product Details

AIGB30N65F5ATMA1 Description

IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors: Bipolar transistors and MOSFET. RS have a curated range of IGBTs from a multitude of trusted brands, including Infineon, ON Semiconductor, STMicroelectronics.

AIGB30N65F5ATMA1 Applications


electronic applications

consumer electronics

AIGB30N65F5ATMA1 Features


? Automotive-qualified power semiconductor portfolio

including both power module and discrete solutions for

flexible coverage of all power classes

? Highly efficient 3-phase driver thanks to very low

conduction losses even at high switching frequencies

? Isolation integrated in gate driver


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