STFV4N150 Description
STFV4N150 is a 1500v N-channel very high voltage PowerMESH? MOSFET. Using the well-consolidated high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company's proprietary edge termination structure gives the lowest RDS(on) per area, unrivaled gate charge, and switching characteristics. The creepage path is what makes this package unique from TO-220FP.
The creepage distance path between each lead and between the leads and the heatsink has been increased to >4.0mm, making this package meet all stringent safety norms in high voltage applications.
STFV4N150 Features
Typical RDS(on)=5|?
Avalanche ruggedness
Gate charge minimized
Very low intrinsic capacitances
High-speed switching
The fully plastic TO-220 package
The creepage distance path is>4mm
STFV4N150 Applications
Computers
Electric Vehicles
Welding
Aircraft
Automation
Medical
