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HUFA76639S3ST

HUFA76639S3ST

HUFA76639S3ST

ON Semiconductor

MOSFET N-CH 100V 50A D2PAK

SOT-23

HUFA76639S3ST Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2002
Series UltraFET™
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 180W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26mOhm @ 51A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 51A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
In-Stock:1206 items

About HUFA76639S3ST

The HUFA76639S3ST from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 100V 50A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the HUFA76639S3ST, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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