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STF2LN60K3

STF2LN60K3

STF2LN60K3

STMicroelectronics

MOSFET (Metal Oxide) N-Channel Tube 4.5 Ω @ 1A, 10V ±30V 235pF @ 50V 12nC @ 10V TO-220-3 Full Pack

SOT-23

STF2LN60K3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status NRND (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature150°C TJ
PackagingTube
Series SuperMESH3™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STF2LN
Number of Elements 1
Power Dissipation-Max 20W Tc
Power Dissipation45W
Turn On Delay Time10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 235pF @ 50V
Current - Continuous Drain (Id) @ 25°C 2A Tc
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Rise Time8.5ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 23.5 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6148 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.21000$1.21
50$0.97020$48.51
100$0.84890$84.89
500$0.65836$329.18

STF2LN60K3 Product Details

STF2LN60K3 Overview


A device's maximal input capacitance is 235pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 2A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 23.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).

STF2LN60K3 Features


a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23.5 ns


STF2LN60K3 Applications


There are a lot of STMicroelectronics
STF2LN60K3 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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