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STF20NM60D

STF20NM60D

STF20NM60D

STMicroelectronics

STF20NM60D datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STF20NM60D Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Series FDmesh™
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Base Part Number STF20
Pin Count4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 45W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation45W
Case Connection ISOLATED
Turn On Delay Time25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 290m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Rise Time12ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 22 ns
Continuous Drain Current (ID) 20A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.29Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 700 mJ
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3485 items

Pricing & Ordering

QuantityUnit PriceExt. Price

STF20NM60D Product Details

STF20NM60D Description


STF20NM60D is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 600V. The FDmeshTM combines a fast-recovery body diode that is intrinsic with all the benefits of reduced on-resistance and quick switching. For bridge topologies, in particular ZVS phase-shift converters, it is therefore highly advised.



STF20NM60D Features


  • High dv/dt and avalanche capabilities

  • 100% Avalanche tested

  • Low input capacitance and gate charge

  • Low gate input resistancE

  • Tight process control and high manufacturing yields



STF20NM60D Applications


  • Switching application

  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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