STP12NK60Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STP12NK60Z Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
Terminal Finish
Tin (Sn)
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
10A
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP12
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
640m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1740pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Tc
Gate Charge (Qg) (Max) @ Vgs
59nC @ 10V
Rise Time
18.5ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
31.5 ns
Turn-Off Delay Time
55 ns
Continuous Drain Current (ID)
10A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain-source On Resistance-Max
0.64Ohm
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
40A
Dual Supply Voltage
600V
Avalanche Energy Rating (Eas)
260 mJ
Nominal Vgs
3.75 V
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1051 items
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STP12NK60Z Product Details
STP12NK60Z Description
STP12NK60Z is a 650v N-channel Zener-protected SuperMESH? Power MOSFET. The SuperMESH? series is obtained through an extreme optimization of ST?ˉs well established strip-based PowerMESH? layout. In addition to pushing on-resistance significantly down, specialties are taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST's full range of high voltage Power MOSFETs.
STP12NK60Z Features
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
STP12NK60Z Applications
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
Toggle Switch
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