Name: STF16N65M5
Brand: STMicroelectronics
SKU: STF16N65M5
Price: 3.41000 USD
Availability: InStock

new-10%

STF16N65M5

Manufacturer part number:STF16N65M5

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 299m Ω @ 6A, 10V ±25V 1250pF @ 100V 45nC @ 10V TO-220-3 Full Pack

Case Package:SOT-23

Datasheet:STF16N65M5 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Factory Lead Time	17 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	MDmesh™ V
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	279mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STF16
Pin Count	3
Number of Elements	1
Power Dissipation-Max	25W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	25W
Case Connection	ISOLATED
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	299m Ω @ 6A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1250pF @ 100V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	9ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	30 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	4V
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	650V
Pulsed Drain Current-Max (IDM)	48A
Avalanche Energy Rating (Eas)	200 mJ
Height	9.3mm
Length	10.4mm
Width	4.6mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STF16N65M5 Product Details

Description

The STF16N65M5 is an N-channel 650 V, 0.230 |?, 12 A MDmesh? V Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247. These products are N-channel MDmesh? V Power MOSFETs built on a cutting-edge proprietary vertical manufacturing technique with the well-known PowerMESH? horizontal layout architecture from STMicroelectronics. The resulting product is especially well suited for applications that need excellent power density and exceptional efficiency due to its extraordinarily low on-resistance, which is unmatched among silicon-based Power MOSFETs.