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IXFT50N60X

IXFT50N60X

IXFT50N60X

IXYS

MOSFET N-CH 600V 50A TO268

SOT-23

IXFT50N60X Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2015
Series HiPerFET™
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 660W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 73m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4660pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 116nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 50A
RoHS StatusROHS3 Compliant
In-Stock:771 items

Pricing & Ordering

QuantityUnit PriceExt. Price
60$8.20000$492

About IXFT50N60X

The IXFT50N60X from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 600V 50A TO268.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFT50N60X, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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