Name: STD80N6F6
Brand: STMicroelectronics
SKU: STD80N6F6
Availability: InStock

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STD80N6F6

Manufacturer part number:STD80N6F6

Manufacturer:STMicroelectronics

Description:STD80N6F6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STD80N6F6 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Resistance	5mOhm
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Base Part Number	STD80
Number of Channels	1
Power Dissipation-Max	120W Tc
Element Configuration	Single
Power Dissipation	120W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	6.5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7480pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	122nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	80A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	60V
Height	4.6mm
Length	10.4mm
Width	9.35mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STD80N6F6 Product Details

STD80N6F6 Description

STD80N6F6 is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a voltage of 60V. The operating temperature of the STD80N6F6 is -55°C~175°C TJ and its maximum power dissipation is 120W. This device is an N-channel Power MOSFET developed using the STripFET? F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.