SQ3427EEV-T1-GE3 Description
The SQ3427EEV-T1-GE3 is an Automotive P-Channel 60 V (D-S) 175 °C MOSFET. A form of field-effect transistor (FET) called a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is most frequently made by carefully controlling the oxidation of silicon. It has an isolated gate, whose voltage controls the device's conductivity. Electronic signals can be switched or amplified using this material's capacity to change conductivity in response to the amount of applied voltage. Nearly the same thing as a MOSFET is a metal-insulator-semiconductor field-effect transistor (MISFET). IGFET, or insulated-gate field-effect transistor, is another equivalent term.
SQ3427EEV-T1-GE3 Features
100 % Rg and UIS Tested
Typical ESD Protection 800 V
Compliant to RoHS Directive 2002/95/EC
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET
AEC-Q101 Qualified
SQ3427EEV-T1-GE3 Applications
Switch mode power supplies
Variable-frequency drives
Power electronics applications
Modern electric vehicles
As switching devices
