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STD16NF06T4

STD16NF06T4

STD16NF06T4

STMicroelectronics

N-Channel Tape & Reel (TR) 70m Ω @ 8A, 10V ±20V 400pF @ 15V 14.1nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

STD16NF06T4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series STripFET™ II
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 70MOhm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 60V
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating16A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number STD16
Pin Count3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 40W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation40W
Case Connection DRAIN
Turn On Delay Time4 ns
FET Type N-Channel
Transistor Application AMPLIFIER
Rds On (Max) @ Id, Vgs 70m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 14.1nC @ 10V
Rise Time15ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.5 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 64A
Height 2.4mm
Length 6.6mm
Width 6.2mm
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6619 items

Pricing & Ordering

QuantityUnit PriceExt. Price

STD16NF06T4 Product Details

STD16NF06T4 Description


STD16NF06T4 is a 60v N-Channel STripFET? II Power MOSFET. The Power MOSFET STD16NF06T4 is the latest development of STMicroelectronic's unique "Single Feature Size?" strip-based process. The resulting transistor STD16NF06T4 shows extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility.



STD16NF06T4 Features


  • Typical RDS(on)=0.060Ω

  • 100% Avalanche Tested

  • Exceptional dv/dt Capability

  • Application Oriented Characterization



STD16NF06T4 Applications


  • Audio Amplifiers

  • Power Tools

  • Automotive Environment


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