Name: STD6N95K5
Brand: STMicroelectronics
SKU: STD6N95K5
Price: 3.10000 USD
Availability: InStock

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STD6N95K5

Manufacturer part number:STD6N95K5

Manufacturer:STMicroelectronics

Description:STD6N95K5 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STD6N95K5 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Cut Tape (CT)
Series	SuperMESH5™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	1.25Ohm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STD6N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	90W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	90W
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.25 Ω @ 3A, 10V
Vgs(th) (Max) @ Id	5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 100V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	9A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	9A
Drain to Source Breakdown Voltage	950V
Avalanche Energy Rating (Eas)	90 mJ
Nominal Vgs	4 V
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STD6N95K5 Product Details

STD6N95K5 Description

The STD6N95K5 Power MOSFETs are designed utilizing MDmeshTM K5 technology based on a proprietary vertical structure that is based on an innovative proprietary design. Consequently, the on-resistance has been reduced dramatically, along with the gate charge, which is ultra-low for applications requiring high efficiency and power density.