STD13NM60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STD13NM60N Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
360mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STD13
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
90W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
90W
Turn On Delay Time
3 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
360m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
790pF @ 50V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
Rise Time
8ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
5.5A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
44A
Avalanche Energy Rating (Eas)
200 mJ
Max Junction Temperature (Tj)
150°C
Height
2.63mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
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STD13NM60N Product Details
STD13NM60N Description
The STD13NM60N is an N-channel Power MOSFET developed using the second generation of MDmeshTM technology. The company's Power MOSFET features a vertical structure combined with its strip layout to deliver the lowest on-resistances and gate charges in the world. The STD13NM60N is designed for the most demanding high-efficiency converters.
STD13NM60N Features
Low gate input resistance
Suitable for switching applications
600V, 11A N-channel MDmesh? II power MOSFET in 3-pin DPAK package
100% avalanche tested
Low input capacitance and gate charge
Suitable for the most demanding high-efficiency converters
STD13NM60N Applications
Power Supplies
Automotive applications
RF Communications
Power Management
Consumer Electronics
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