Welcome to Hotenda.com Online Store!

logo
userjoin
Home

IRFU9110PBF

IRFU9110PBF

IRFU9110PBF

Vishay Siliconix

MOSFET (Metal Oxide) P-Channel Tube 1.2 Ω @ 1.9A, 10V ±20V 200pF @ 25V 8.7nC @ 10V 100V TO-251-3 Short Leads, IPak, TO-251AA

SOT-23

IRFU9110PBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Weight 329.988449mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1.2Ohm
Terminal Finish Matte Tin (Sn)
Additional FeatureAVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 25W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation2.5W
Case Connection DRAIN
Turn On Delay Time10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.2 Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.1A Tc
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Rise Time27ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 3.1A
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Height 6.22mm
Length 6.73mm
Width 2.38mm
REACH SVHC Unknown
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4947 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.77000$1.77
10$1.56900$15.69
100$1.23970$123.97
500$0.96140$480.7

IRFU9110PBF Product Details

IRFU9110PBF Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 200pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.1A.With a drain-source breakdown voltage of -100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 15 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-2V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFU9110PBF Features


a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 15 ns
a threshold voltage of -2V
a 100V drain to source voltage (Vdss)


IRFU9110PBF Applications


There are a lot of Vishay Siliconix
IRFU9110PBF applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

Get Subscriber

Enter Your Email Address, Get the Latest News