STAC4932B Description
An N-channel MOS field-effect RF power transistor is the STAC4932B. It is designed for applications using 100 V pulses up to 250 MHz. This gadget is appropriate for usage in commercial, academic, and therapeutic settings. The most recent iteration of effective, patent-pending STAC package technology is utilized by the STAC4932B.
STAC4932B Features
? outstanding thermal stability
? Standard source push-pull arrangement
? POUT at 123 MHz is 1000 W minimum (often 1200 W) with 24.6 dB gain.
? 1 millisecond, 10% pulse conditions
? Compliant with European Directive 2002/95/EC
? STAC packaging technique for air-cavities
STAC4932B Applications
Switching applications
