SD2931-10W Description
A gold-metalized N-channel MOS field-effect RF power transistor is the SD2931-10W. It is designed for usage in 50 V dc large signal applications up to 230 MHz and is electrically identical to the common SD2931 MOSFET.
The SD2931-10W is mechanically compatible with the SD2931 but provides higher thermal performance (a 25% reduction in thermal resistance), making it the best-in-class transistor for ISM applications where dependability and toughness are essential.
SD2931-10W Features
POUT = 150 W min. with 14 dB gain @ 175 MHz
Thermally enhanced packaging for lower junction temperatures
Gold metalization
Excellent thermal stability
Common source configuration
SD2931-10W Applications
Industrial
RF Communications
Power Management
