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SCTWA50N120

SCTWA50N120

SCTWA50N120

STMicroelectronics

SiCFET (Silicon Carbide) N-Channel 69m Ω @ 40A, 20V +25V, -10V 1900pF @ 400V 122nC @ 20V 1200V TO-247-3

SOT-23

SCTWA50N120 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature-55°C~200°C TJ
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology SiCFET (Silicon Carbide)
Base Part Number SCTWA
Power Dissipation-Max 318W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 69m Ω @ 40A, 20V
Vgs(th) (Max) @ Id 3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 400V
Current - Continuous Drain (Id) @ 25°C 65A Tc
Gate Charge (Qg) (Max) @ Vgs 122nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
RoHS StatusROHS3 Compliant
In-Stock:268 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$38.80000$38.8
10$36.05100$360.51
100$31.29300$3129.3

SCTWA50N120 Product Details

SCTWA50N120 Description

SCTWA50N120 MOSFET is built on well-established silicon processes that supply designers with an array of devices. SCTWA50N120 Power MOSFET has an excellent switching performance almost independent of temperature. STMicroelectronics SCTWA50N120 is utilized in high-efficiency and high power density applications.

SCTWA50N120 Features

Low capacitance

Fast and robust intrinsic body diode

High operating junction temperature capability

Tight variation of on-resistance vs. temperature

SCTWA50N120 Applications

Reverse Polarity Switch

DC/DC Conversion

High Frequency Isolated DC-DC

Converters with Synchronous Rectification

Telecom and Industrial Use


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