FDC3535 MOSFET Description
This P-Channel MOSFET FDC3535 is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance, and ruggedness. The FDC3535 has a maximum on-resistance of 233 mΩ (VGS @-4.5 V) and its nominal Gate-Source Voltage is ±20V.
FDC3535 MOSFET Features
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
High-performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
FDC3535 MOSFET Applications
IGBTs and MOSFETs
Inductors
Bridge Configurations
Synchronous Rectifiers
AC Motor Speed Control
Switched Reluctance Motor Drivers
High-side P-Channel Devices
Dual Forward Converters
Current Control
