SCT20N120H Description
This kind of silicon carbide power MOSFET is produced by using the advanced and innovative characteristics of wide band gap materials. This results in unparalleled on-resistance per unit area and very good switching performance, almost independent of temperature. The excellent thermal properties of silicon carbide materials allow designers to use industry standard profiles with significantly improved thermal properties. These characteristics make the equipment very suitable for high efficiency and high power density applications.
SCT20N120H Features
? Very tight variation of on-resistance vs. temperature
? Very high operating junction temperature capability (TJ = 175 °C)
? Very fast and robust intrinsic body diode
? Low capacitance
SCT20N120H Applications
? Solar inverters, UPS
? Motor drives
? High voltage DC-DC converters
? Switch mode power supplies
