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PD85004

PD85004

PD85004

STMicroelectronics

RF MOSFET Transistors RF PWR TRANSISTOR

SOT-23

PD85004 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Surface Mount
Package / Case TO-243AA
Number of Pins 8
Weight 130.492855mg
PackagingCut Tape (CT)
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature150°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Max Power Dissipation6W
Terminal FormFLAT
Current Rating2A
Frequency 870MHz
Base Part Number PD85004
Pin Count3
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation6W
Case Connection SOURCE
Current - Test 50mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 15V
Max Output Power5W
Drain Current-Max (Abs) (ID) 2A
Input Capacitance16pF
Power - Output 4W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 13.6V
Power Gain 17dB
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:3456 items

Pricing & Ordering

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PD85004 Product Details

The STMicroelectronics Transistors - FETs, MOSFETs - RF PD85004 is a high-performance RF MOSFET transistor designed for use in RF power applications. This device features a low gate-source capacitance, low gate-drain capacitance, and low gate-drain leakage current, making it ideal for use in high-frequency applications. It also has a high breakdown voltage and a high power dissipation rating, making it suitable for use in high-power applications. The device is also designed to be highly reliable and has a long lifetime. This makes it an ideal choice for use in a variety of RF power applications.

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