PD57018 Description
PD57018 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes PD57018 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics PD57018 has the excellent thermal stability.
PD57018 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures
PD57018 Applications
ISM applications
DC large signal applications
