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PD57002

PD57002

PD57002

STMicroelectronics

PD57002 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website

SOT-23

PD57002 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Package / Case PowerSO-10 Exposed Bottom Pad
Number of Pins 10
PackagingTube
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature150°C
Min Operating Temperature -65°C
Additional FeatureHIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation4.75W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating250mA
Frequency 960MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PD57002
Pin Count2
JESD-30 Code R-PDSO-G2
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation4.75W
Case Connection SOURCE
Current - Test 10mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 20V
Gain 15dB
Drain Current-Max (Abs) (ID) 0.25A
Drain to Source Breakdown Voltage 65V
Power - Output 2W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS StatusROHS3 Compliant
In-Stock:2724 items

Pricing & Ordering

QuantityUnit PriceExt. Price
400$6.37500$2550

PD57002 Product Details

PD57002 Description

PD57002 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes PD57002 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics PD57002 has the excellent thermal stability.

PD57002 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging for lower junction temperatures

PD57002 Applications

ISM applications

DC large signal applications


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