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PD55035S-E

PD55035S-E

PD55035S-E

STMicroelectronics

PD55035S-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website

SOT-23

PD55035S-E Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 52 Weeks
Contact PlatingTin
Mount Surface Mount
Package / Case PowerSO-10 Exposed Bottom Pad
Number of Pins 3
PackagingTube
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature165°C
Min Operating Temperature -65°C
Additional FeatureHIGH RELIABILITY
Subcategory FET General Purpose Power
Voltage - Rated DC 40V
Max Power Dissipation95W
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 225
Current Rating7A
Frequency 500MHz
Base Part Number PD55035
Pin Count10
JESD-30 Code R-PDSO-F2
Number of Elements 1
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation95W
Case Connection SOURCE
Current - Test 200mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Max Output Power35W
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 12.5V
Power Gain 16.9dB
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1627 items

Pricing & Ordering

QuantityUnit PriceExt. Price
400$24.85300$9941.2

PD55035S-E Product Details

PD55035S-E Description


The component is an enhancement-mode lateral field-effect RF power transistor with a shared source N-channel. It is intended for industrial, commercial, and high gain applications. It runs in common source mode at 12 V at frequencies up to 1 GHz. The device is housed in PowerSO10RF, the first true SMD plastic RF power package, and has the high gain, linearity, and reliability of ST's most recent LDMOS technology.



PD55035S-E Features


  • outstanding thermal stability

  • Config of common sources

  • POUT = 35 W with a gain of 16.9 dB at 500 MHz and 12.5 V.

  • Novel plastic package for RF



PD55035S-E Applications


Switching applications


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