PD55025 Description
PD55025 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes PD55025 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics PD55025 has the excellent thermal stability.
PD55025 Features
Gold metalization
Excellent thermal stability
Common source configuration
POUT= 300 W min. with 20 dB gain @ 30 MHz
Thermally enhanced packaging for lower junction temperatures
PD55025 Applications
ISM applications
DC large signal applications
