STMICROELECTRONICS PD55015-E RF FET Transistor, 40 V, 5 A, 73 W, 480 MHz, 520 MHz, PowerSO-10RF
SOT-23
PD55015-E Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
25 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Package / Case
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Number of Pins
2
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Max Operating Temperature
165°C
Min Operating Temperature
-65°C
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Max Power Dissipation
73W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
250
Current Rating
5A
Frequency
500MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
PD55015
Pin Count
10
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
73W
Case Connection
SOURCE
Current - Test
150mA
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
40V
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Continuous Drain Current (ID)
5A
Gate to Source Voltage (Vgs)
20V
Max Output Power
15W
Drain Current-Max (Abs) (ID)
5A
Drain to Source Breakdown Voltage
40V
Input Capacitance
89pF
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
12.5V
Min Breakdown Voltage
40V
Power Gain
14dB
Height
3.5mm
Length
7.5mm
Width
9.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:443 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$120.787765
$120.787765
10
$113.950722
$1139.50722
100
$107.500681
$10750.0681
500
$101.415737
$50707.8685
1000
$95.675223
$95675.223
PD55015-E Product Details
Description:
The STMicroelectronics PD55015-E RF FET Transistor is a high-performance, low-cost, high-power FET transistor designed for use in RF applications. It features a 40 V drain-source voltage, 5 A drain current, 73 W power dissipation, and a frequency range of 480 MHz to 520 MHz. The device is housed in a PowerSO-10RF package, making it suitable for use in a wide range of applications.
Features:
• High-performance, low-cost, high-power FET transistor • 40 V drain-source voltage • 5 A drain current • 73 W power dissipation • Frequency range of 480 MHz to 520 MHz • Housed in a PowerSO-10RF package
Applications:
The STMicroelectronics PD55015-E RF FET Transistor is suitable for use in a wide range of RF applications, including:
• Wireless communication systems • Cellular base stations • Radio transmitters and receivers • Automotive electronics • Industrial control systems • Medical electronics
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