LET9150 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website
SOT-23
LET9150 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Screw
Package / Case
M246
Number of Pins
5
Packaging
Bulk
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Subcategory
FET General Purpose Power
Max Power Dissipation
269W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
225
Current Rating
20A
Frequency
860MHz
Base Part Number
LET9150
Pin Count
4
JESD-30 Code
R-PDFM-F4
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
600mA
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
80V
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Continuous Drain Current (ID)
20A
Gate to Source Voltage (Vgs)
15V
Gain
20dB
Power - Output
150W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
32V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
In-Stock:1015 items
LET9150 Product Details
LET9150 Description
The LET9150 is an enhancement-mode, common source, n-channel lateral field-effect RF power transistor intended for industrial and commercial broadband applications at frequencies up to 2 GHz.
LET9150 Features
outstanding thermal stability
Push-pull common source setup
POUT = 150 W with a gain of 20 dB at 860 MHz.
Package without BeO
LET9150 Applications
Switching applications
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