2N6517G Overview
This device has a DC current gain of 20 @ 50mA 10V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).40MHz is present in the transition frequency.In extreme cases, the collector current can be as low as 500mA volts.
2N6517G Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
2N6517G Applications
There are a lot of ON Semiconductor 2N6517G applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
